It is understood that Hynix announced on the 29th that it has developed two computer DRAM products and will first adopt a 30-nanometer production process. According to Hynix, it is planned to use 38-nanometer process to produce 4Gb and 2Gb products. In the first quarter of 2011, it will first mass-produce 2Gb products.
Compared to the 40-nm process, the number of semiconductors that can be produced on a 30-nanometer process using a single wafer increases by 60 to 70%. Not only improve the productivity, but also help improve cost competitiveness. Hynix's 38-nanometer manufacturing process increases DRAM production by about 70% over the current 44-nanometer manufacturing process.
Hynix stated that the processing speed of product data produced using a 38-nanometer process can be increased to 2,133 Mbps, which is approximately 60% faster than the 44-nanometer process product data transmission speed. In addition, about 50% of the power consumption of 44-nanometer process products is reduced.
Hyunsu Park, vice president of Hynix, said that currently, 2Gb DRAM products account for 50% of the total volume. In the future, the proportion of high-capacity, high-performance and low-power consumption products will be expanded, and it is expected to lead the market for high-capacity products such as 4Gb.
Compared to the 40-nm process, the number of semiconductors that can be produced on a 30-nanometer process using a single wafer increases by 60 to 70%. Not only improve the productivity, but also help improve cost competitiveness. Hynix's 38-nanometer manufacturing process increases DRAM production by about 70% over the current 44-nanometer manufacturing process.
Hynix stated that the processing speed of product data produced using a 38-nanometer process can be increased to 2,133 Mbps, which is approximately 60% faster than the 44-nanometer process product data transmission speed. In addition, about 50% of the power consumption of 44-nanometer process products is reduced.
Hyunsu Park, vice president of Hynix, said that currently, 2Gb DRAM products account for 50% of the total volume. In the future, the proportion of high-capacity, high-performance and low-power consumption products will be expanded, and it is expected to lead the market for high-capacity products such as 4Gb.
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