Researchers at OSRAM Opto Semiconductors said that in the research they have done, they have successfully produced gallium nitride LED chips on silicon substrates, replacing the more expensive sapphire substrates currently in common use.
Silicon is a standard semiconductor material, which has excellent performance as a large size, low cost, easy processing, and good electrical conductivity. However, the technical difficulty lies in the fact that the thermal expansion coefficients of silicon and gallium nitride are different, and stress is easily generated in the manufacturing process, resulting in uneven thickness or cracking of the film, and thus has not been widely used in the LED industry. Through a special process, the new technology not only avoids the previous cracking, but also makes the new LEDs comparable in stability and brightness to the traditional sapphire-based LEDs, making them ideal for high-power solid-state lighting.
With this technology, OSRAM has successfully produced a high performance LED wafer with a diameter of 150 mm (6 inches). Researchers have begun to adjust the production process to make 200 mm (8 inch) wafers. This will further increase the number of chips on each substrate and reduce production costs. It is understood that most of the current LED industry is based on 50 mm (2 inches) or 100 mm (4 inches) sapphire substrates. If silicon-based gallium nitride technology can be used, at least 75% of raw material cost can be saved.
At present, this new film-based LED is still in the sample trial stage, and then it will be tested for reliability in a real-life environment. Preliminary experiments have shown that the blue and white silicon-based LEDs produced by this technology can achieve similar performance to the current sapphire substrate products on the market. The first commercial LED products using this technology are expected to be available two years later.
Silicon is a standard semiconductor material, which has excellent performance as a large size, low cost, easy processing, and good electrical conductivity. However, the technical difficulty lies in the fact that the thermal expansion coefficients of silicon and gallium nitride are different, and stress is easily generated in the manufacturing process, resulting in uneven thickness or cracking of the film, and thus has not been widely used in the LED industry. Through a special process, the new technology not only avoids the previous cracking, but also makes the new LEDs comparable in stability and brightness to the traditional sapphire-based LEDs, making them ideal for high-power solid-state lighting.
With this technology, OSRAM has successfully produced a high performance LED wafer with a diameter of 150 mm (6 inches). Researchers have begun to adjust the production process to make 200 mm (8 inch) wafers. This will further increase the number of chips on each substrate and reduce production costs. It is understood that most of the current LED industry is based on 50 mm (2 inches) or 100 mm (4 inches) sapphire substrates. If silicon-based gallium nitride technology can be used, at least 75% of raw material cost can be saved.
At present, this new film-based LED is still in the sample trial stage, and then it will be tested for reliability in a real-life environment. Preliminary experiments have shown that the blue and white silicon-based LEDs produced by this technology can achieve similar performance to the current sapphire substrate products on the market. The first commercial LED products using this technology are expected to be available two years later.
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