**Introduction**
The IR2110 is a monolithic integrated driver module designed for dual-channel, high-voltage, and high-speed power devices. Known for its compact size, low cost, high integration, fast response, and strong driving capability, the IR2110 has become a popular choice in power electronics applications such as motor drives and power conversion systems. It utilizes advanced bootstrap circuitry and level-shifting technology to simplify the control of power devices, allowing each pair of MOSFETs (upper and lower) to be driven by a single IR2110. This design reduces the number of required power supplies and simplifies system architecture, enhancing reliability and reducing overall volume.
**1. Internal Structure and Functional Characteristics of IR2110**
The IR2110 features a floating power supply with a high-side operating voltage of up to 500V and an operating frequency of 500kHz. Its internal structure consists of three main sections: logic input, level shifting, and output protection. Fabricated using a CMOS process, the IR2110 operates with a logic supply voltage range of 5V to 20V, making it compatible with both TTL and CMOS logic signals. It provides two independent output channels for high-side and low-side switching, each equipped with hysteresis-based undervoltage lockout. The logic circuit ground (Vss) and power circuit ground (COM) are offset by 5V, which helps in filtering out noise pulses shorter than 50ns, offering better noise immunity.
The bootstrap circuit of the IR2110 is particularly well-suited for various bridge driver configurations. A typical application is shown in Figure 2, where pins 3 (VCC) and 6 (VB) represent the low-side and high-side power supplies, respectively. Pin 2 (COM) serves as the common ground for the low-side power, while pin 5 (Vs) acts as the common point for the high-side floating supply. Pin 9 (VDD) is the logic power supply, and pin 13 (Vss) is the logic ground. The shutdown input (SD) can be used to disable the output, ensuring safe operation.
When the input signal HIN/LIN is high, the corresponding output HO/LO becomes active, turning on the MOSFET. If the input is low, the output turns off. Additionally, if the gate drive voltage drops below 8.3V, the internal undervoltage lockout mechanism will prevent any output activity. The gate drive voltage ranges from 10V to 20V, with a typical turn-on time of 120ns and turn-off time of 94ns. A built-in dead-time circuit ensures that the upper and lower MOSFETs do not conduct simultaneously, preventing short-circuit conditions and improving system reliability.
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