Electromagnetic therapy device II

DFN1006 TP-RCLAMP3321P ESD Diode Low Capacitance
Circuit Operation Principle The electromagnetic therapy instrument circuit consists of an ultra-low frequency oscillator, a magnetic pulse generation circuit and a power supply circuit, as shown in Figure 9-14.

The ultra low frequency oscillator circuit is composed of a time base integrated circuit IC, resistors R1, R2, a potentiometer RP, capacitors C1, C2, and a diode VD1.
The magnetic pulse generating circuit is composed of a resistor R3, a transistor V diode VD2, and an electromagnetic coil L.
The power circuit is composed of a power switch S, a battery GB, a current limiting resistor R4, and a power indicating LED VL.
When the power switch S is turned on, the 6V DC voltage of the GB is supplied to the ultra-low frequency oscillator and the magnetic pulse generating circuit, and the VLA is also turned on after the R4 current limiting step-down.
The ultra-low frequency oscillator oscillates after power-on, and the ultra-low frequency oscillation signal whose frequency is adjustable is output from the 3 pin of the IC, so that V is intermittently turned on. When the IC 3 pin outputs a high level, V saturation turns on, L generates a magnetic field due to the current flowing; when the 3 pin of lC outputs a low level, V is turned off, "the stored energy is quickly vented through VD2. As V is intermittently turned on, L can generate a pulsed magnetic field.
Adjusting the resistance of the RP can change the oscillation frequency of the ultra-low frequency oscillator, that is, change the frequency of this pulse.
Component selection
Rl-R4 uses 1/4W carbon film resistor or metal film resistor.
The RP uses a small organic solid potentiometer.
Cl and C3 use aluminum electrolytic capacitors with a withstand voltage of 16V; C2 uses monolithic capacitors or polyester capacitors.
VDl selects 1N4148 type silicon switch diode for use; VD2 selects 1N4007 type silicon rectifier diode for use.
V selects 3DK4 type silicon NPN transistor for use.
lC selects NE555 type time base integrated circuit.
S selects a small single-pole switch with a contact current capacity greater than 2A.
GB selects 6V small capacity maintenance-free battery, and can also use small DC regulated power supply.
L is made by using an enamel wire of about φO.lmm around a magnetic bar of φOmmx3Omm for about 4,200 。.


Transparent Led Film Screen

Transparent Led Film Screen,Adhesive Transparent Led Display,Adhesive Led Transparent Film Screen,Transparent Led Display Film Screen

Guangdong Rayee Optoelectronic Technology Co.,Ltd. , https://www.rayeeled.com

Posted on